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DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN DMT6018LDR-13

RS stock no.:: 182-7493
Mfr. Part No.:: DMT6018LDR-13
Manufacturer:: DiodesZetex

DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN DMT6018LDR-13

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 101,71

(exc. VAT)

R 116,97

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

29,980 left, ready to ship from another location

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Units	Per unit	Per Pack*
10 - 490	R 10.171	R 101.71
500 - 990	R 9.917	R 99.17
1000 - 2490	R 9.619	R 96.19
2500 - 4990	R 9.234	R 92.34
5000 +	R 8.865	R 88.65

*price indicative

RS stock no.:: 182-7493
Mfr. Part No.:: DMT6018LDR-13
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.1A
	Maximum Drain Source Voltage Vds	60V
	Package Type	VDFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	26mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.9W
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	6.2nC
	Forward Voltage Vf	0.75V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Dual
	Standards/Approvals	J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS
	Width	3.05 mm
	Height	0.8mm
	Length	3.05mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.1A
	Maximum Drain Source Voltage Vds 60V
	Package Type VDFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 26mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.9W
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 6.2nC
	Forward Voltage Vf 0.75V
	Maximum Operating Temperature -55°C
	Transistor Configuration Dual
	Standards/Approvals J-STD-020, MIL-STD-202, UL 94V-0, AEC-Q101, RoHS
	Width 3.05 mm
	Height 0.8mm
	Length 3.05mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet DMT6018LDR-13

COO (Country of Origin):: CN

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Applications

Power Management Functions

Analog Switch

DiodesZetex Dual 2 Type N-Channel Power MOSFET, 9.1 A, 60 V Enhancement, 8-Pin VDFN DMT6018LDR-13

FREE delivery for orders over R 1,500.00

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