STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 STD11N60M6
- RS stock no.:
- 212-2105P
- Mfr. Part No.:
- STD11N60M6
- Manufacturer:
- STMicroelectronics
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- RS stock no.:
- 212-2105P
- Mfr. Part No.:
- STD11N60M6
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STD11N60M6 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 90W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.3nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STD11N60M6 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 90W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.3nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
MDMesh M6 MOSFET N-CH
The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected