Vishay SQJQ142E Type N-Channel MOSFET, 460 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ142E-T1_GE3
- RS stock no.:
- 210-5058
- Mfr. Part No.:
- SQJQ142E-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 206,38
(exc. VAT)
R 237,335
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,000 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 41.276 | R 206.38 |
| 10 - 95 | R 40.244 | R 201.22 |
| 100 - 495 | R 39.036 | R 195.18 |
| 500 - 995 | R 37.474 | R 187.37 |
| 1000 + | R 35.976 | R 179.88 |
*price indicative
- RS stock no.:
- 210-5058
- Mfr. Part No.:
- SQJQ142E-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 460A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ142E | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 8mm | |
| Width | 8.1 mm | |
| Height | 1.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 460A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ142E | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 8mm | ||
Width 8.1 mm | ||
Height 1.7mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK 8 x 8L package type.
TrenchFET® Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
Related links
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