Vishay SQJB46ELP_RC N-Channel MOSFET, 30 A, 40 V Enhancement, 4-Pin SO-8 SQJB46ELP-T1_GE3
- RS stock no.:
- 210-5053
- Mfr. Part No.:
- SQJB46ELP-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 212,16
(exc. VAT)
R 243,98
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 June 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 21.216 | R 212.16 |
| 20 - 90 | R 20.686 | R 206.86 |
| 100 - 490 | R 20.065 | R 200.65 |
| 500 - 990 | R 19.262 | R 192.62 |
| 1000 + | R 18.492 | R 184.92 |
*price indicative
- RS stock no.:
- 210-5053
- Mfr. Part No.:
- SQJB46ELP-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQJB46ELP_RC | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 15.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 34W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Width | 6.25mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQJB46ELP_RC | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 15.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 34W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Width 6.25mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay N channel MOSFET has PowerPAK SO-8L package type.
R-C values for the electrical circuit in the foster/tank and cauer/filter configurations are included
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