Vishay SiR680LDP Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin SO-8 SIR680LDP-T1-RE3
- RS stock no.:
- 210-5003
- Mfr. Part No.:
- SIR680LDP-T1-RE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 240,48
(exc. VAT)
R 276,55
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 48.096 | R 240.48 |
| 10 - 95 | R 46.894 | R 234.47 |
| 100 - 495 | R 45.488 | R 227.44 |
| 500 - 995 | R 43.668 | R 218.34 |
| 1000 + | R 41.922 | R 209.61 |
*price indicative
- RS stock no.:
- 210-5003
- Mfr. Part No.:
- SIR680LDP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiR680LDP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiR680LDP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 130 A drain current.
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay SiR680LDP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN FDMS86350
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SIR182LDP-T1-RE3
- Vishay SiDR680ADP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay SiR826LDP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8