Vishay SiR680LDP Type N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin SO-8 SIR680LDP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 251,03

(exc. VAT)

R 288,685

(inc. VAT)

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Last RS stock
  • Final 5,720 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5R 50.206R 251.03
10 - 95R 48.95R 244.75
100 - 495R 47.482R 237.41
500 - 995R 45.582R 227.91
1000 +R 43.758R 218.79

*price indicative

Packaging Options:
RS stock no.:
210-5003
Mfr. Part No.:
SIR680LDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

80V

Series

SiR680LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.33mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

90nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.26 mm

Height

1.12mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 130 A drain current.

TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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