Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3

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Subtotal (1 pack of 5 units)*

R 363,38

(exc. VAT)

R 417,885

(inc. VAT)

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Last RS stock
  • Final 310 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5R 72.676R 363.38
10 - 95R 70.86R 354.30
100 - 245R 68.734R 343.67
250 - 495R 65.984R 329.92
500 +R 63.344R 316.72

*price indicative

Packaging Options:
RS stock no.:
210-4988
Mfr. Part No.:
SiHG186N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

4.58mm

Standards/Approvals

No

Width

15.29 mm

Length

33.91mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has TO-247AC package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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