Texas Instruments NexFET Type N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin VSONP CSD19531Q5A
- RS stock no.:
- 208-8485
- Mfr. Part No.:
- CSD19531Q5A
- Manufacturer:
- Texas Instruments
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 149,59
(exc. VAT)
R 172,03
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,250 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 29.918 | R 149.59 |
| 50 - 95 | R 29.17 | R 145.85 |
| 100 - 245 | R 28.294 | R 141.47 |
| 250 + | R 27.162 | R 135.81 |
*price indicative
- RS stock no.:
- 208-8485
- Mfr. Part No.:
- CSD19531Q5A
- Manufacturer:
- Texas Instruments
Specification
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NexFET | |
| Package Type | VSONP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.8 mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Length | 5.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NexFET | ||
Package Type VSONP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.8 mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Length 5.9mm | ||
Automotive Standard No | ||
-
-
Related links
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 16 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 16 V Enhancement, 8-Pin VSONP CSD16403Q5A
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP CSD19534Q5A
- Texas Instruments NexFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin VSONP CSD17484F4