DiodesZetex DMT47 Type N-Channel MOSFET, 49.1 A, 40 V Enhancement, 8-Pin PowerDI3333 DMT47M2SFVW-7
- RS stock no.:
- 206-0145
- Mfr. Part No.:
- DMT47M2SFVW-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 226,55
(exc. VAT)
R 260,525
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,900 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.062 | R 226.55 |
| 50 - 75 | R 8.835 | R 220.88 |
| 100 - 225 | R 8.57 | R 214.25 |
| 250 - 975 | R 8.227 | R 205.68 |
| 1000 + | R 7.898 | R 197.45 |
*price indicative
- RS stock no.:
- 206-0145
- Mfr. Part No.:
- DMT47M2SFVW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49.1A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333 | |
| Series | DMT47 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.67W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.2mm | |
| Height | 0.75mm | |
| Width | 3.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49.1A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333 | ||
Series DMT47 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.67W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.2mm | ||
Height 0.75mm | ||
Width 3.2 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 40V,8 pin N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20V with 2.67 W thermal power dissipation.
Low RDS(ON) – ensures on-state losses are minimized
Ensures more reliable and robust end application
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