DiodesZetex DMP6110 Type P-Channel MOSFET, 4.2 A, 60 V Enhancement, 6-Pin UDFN DMP6110SFDFQ-7
- RS stock no.:
- 206-0135
- Mfr. Part No.:
- DMP6110SFDFQ-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 260,625
(exc. VAT)
R 299,725
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,000 unit(s) shipping from 09 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 10.425 | R 260.63 |
| 50 - 75 | R 10.164 | R 254.10 |
| 100 - 225 | R 9.86 | R 246.50 |
| 250 - 975 | R 9.465 | R 236.63 |
| 1000 + | R 9.086 | R 227.15 |
*price indicative
- RS stock no.:
- 206-0135
- Mfr. Part No.:
- DMP6110SFDFQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | UDFN | |
| Series | DMP6110 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.76W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.57mm | |
| Standards/Approvals | No | |
| Width | 1.95 mm | |
| Length | 1.95mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type UDFN | ||
Series DMP6110 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.76W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.57mm | ||
Standards/Approvals No | ||
Width 1.95 mm | ||
Length 1.95mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V,6 pin P channel enhancement mode MOSFET is designed to meet the stringent requirement of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in power management function and battery management application. Its gate-source voltage is 20V with 0.76 W thermal power dissipation..
Low on-resistance
Low input capacitance
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