DiodesZetex DMNH4004 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin PowerDI5060 DMNH4004SPS-13
- RS stock no.:
- 206-0095
- Mfr. Part No.:
- DMNH4004SPS-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 226,675
(exc. VAT)
R 260,675
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.067 | R 226.68 |
| 50 - 75 | R 8.84 | R 221.00 |
| 100 - 225 | R 8.575 | R 214.38 |
| 250 - 975 | R 8.232 | R 205.80 |
| 1000 + | R 7.903 | R 197.58 |
*price indicative
- RS stock no.:
- 206-0095
- Mfr. Part No.:
- DMNH4004SPS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMNH4004 | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.8W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.6mm | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Width | 4.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMNH4004 | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.8W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.6mm | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Width 4.7 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 40V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 1.3 W thermal power dissipation.
Rated to +175°C is ideal for high ambient temperature environment
Low Qg – minimises switching losses
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