Vishay SiHA125N60EF Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-220 SIHA125N60EF-GE3

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Subtotal (1 pack of 5 units)*

R 452,38

(exc. VAT)

R 520,235

(inc. VAT)

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  • Shipping from 10 November 2026
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Units
Per unit
Per Pack*
5 - 45R 90.476R 452.38
50 - 95R 88.214R 441.07
100 - 245R 85.568R 427.84
250 - 495R 82.146R 410.73
500 +R 78.86R 394.30

*price indicative

Packaging Options:
RS stock no.:
204-7242
Mfr. Part No.:
SIHA125N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Series

SiHA125N60EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

31nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

28.1mm

Height

4.3mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

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