Vishay SQJA81EP Type N-Channel MOSFET, 46 A, 80 V Enhancement, 4-Pin SO-8 SQJA81EP-T1_GE3
- RS stock no.:
- 204-7240
- Mfr. Part No.:
- SQJA81EP-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 737,26
(exc. VAT)
R 847,84
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 36.863 | R 737.26 |
| 100 - 480 | R 35.942 | R 718.84 |
| 500 - 980 | R 34.864 | R 697.28 |
| 1000 - 1480 | R 33.469 | R 669.38 |
| 1500 + | R 32.13 | R 642.60 |
*price indicative
- RS stock no.:
- 204-7240
- Mfr. Part No.:
- SQJA81EP-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SQJA81EP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 17.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Width | 4.8 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SQJA81EP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 17.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Width 4.8 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
The Vishay Automotive P-Channel 80 V (D-S) 175 °C MOSFET is AEC-Q101 qualified.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
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