Vishay Dual SQJ264EP 2 Type N-Channel MOSFET, 54 A, 60 V Enhancement, 6-Pin SO-8 SQJ264EP-T1_GE3
- RS stock no.:
- 204-7238
- Mfr. Part No.:
- SQJ264EP-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 468,64
(exc. VAT)
R 538,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 18 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 23.432 | R 468.64 |
| 100 - 480 | R 22.846 | R 456.92 |
| 500 - 980 | R 22.16 | R 443.20 |
| 1000 - 1480 | R 21.274 | R 425.48 |
| 1500 + | R 20.423 | R 408.46 |
*price indicative
- RS stock no.:
- 204-7238
- Mfr. Part No.:
- SQJ264EP-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SQJ264EP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 4.9mm | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Width | 4.37 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SQJ264EP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 4.9mm | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Width 4.37 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs is optimized for synchronous buck applications. It is AEC-Q101 qualified.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
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