Vishay SiJ462ADP Type N-Channel MOSFET, 39.3 A, 60 V Enhancement, 4-Pin SO-8 SiJ462ADP-T1-GE3
- RS stock no.:
- 204-7215
- Mfr. Part No.:
- SiJ462ADP-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 366,00
(exc. VAT)
R 420,80
(inc. VAT)
Add 100 units to get free delivery
In Stock
- 2,960 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 18.30 | R 366.00 |
| 100 - 480 | R 17.842 | R 356.84 |
| 500 - 980 | R 17.307 | R 346.14 |
| 1000 - 1480 | R 16.614 | R 332.28 |
| 1500 + | R 15.95 | R 319.00 |
*price indicative
- RS stock no.:
- 204-7215
- Mfr. Part No.:
- SiJ462ADP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 39.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiJ462ADP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 22.3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.25mm | |
| Standards/Approvals | No | |
| Width | 1.14 mm | |
| Height | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 39.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiJ462ADP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 22.3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.25mm | ||
Standards/Approvals No | ||
Width 1.14 mm | ||
Height 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It's flexible leads provide resilience to mechanical stress.
TrenchFET Gen IV power MOSFET
100 % Rg and UIS tested
Related links
- Vishay SiJ462ADP Type N-Channel MOSFET 60 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK
- Vishay SiJ128LDP Type N-Channel MOSFET 80 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8