Vishay SiJ462ADP Type N-Channel MOSFET, 39.3 A, 60 V Enhancement, 4-Pin SO-8 SiJ462ADP-T1-GE3

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Subtotal (1 pack of 20 units)*

R 376,34

(exc. VAT)

R 432,80

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80R 18.817R 376.34
100 - 480R 18.346R 366.92
500 - 980R 17.796R 355.92
1000 - 1480R 17.084R 341.68
1500 +R 16.40R 328.00

*price indicative

Packaging Options:
RS stock no.:
204-7215
Mfr. Part No.:
SiJ462ADP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

39.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SiJ462ADP

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

22.3W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.25mm

Width

1.14 mm

Standards/Approvals

No

Height

6.25mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It's flexible leads provide resilience to mechanical stress.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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