onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L040N120SC1
- RS stock no.:
- 202-5738
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 675,53
(exc. VAT)
R 776,86
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 394 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 337.765 | R 675.53 |
| 50 - 98 | R 329.32 | R 658.64 |
| 100 - 198 | R 319.44 | R 638.88 |
| 200 + | R 306.66 | R 613.32 |
*price indicative
- RS stock no.:
- 202-5738
- Mfr. Part No.:
- NVH4L040N120SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Operating Temperature | 170°C | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Operating Temperature 170°C | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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