STMicroelectronics ST Type N-Channel MOSFET, 52 A, 600 V Depletion, 3-Pin TO-247
- RS stock no.:
- 202-5552
- Mfr. Part No.:
- STWA67N60M6
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 4 433,10
(exc. VAT)
R 5 098,20
(inc. VAT)
Add 30 units to get free delivery
Temporarily out of stock
- Shipping from 24 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 147.77 | R 4,433.10 |
| 120 - 240 | R 144.076 | R 4,322.28 |
| 270 - 570 | R 139.753 | R 4,192.59 |
| 600 - 1170 | R 134.163 | R 4,024.89 |
| 1200 + | R 128.797 | R 3,863.91 |
*price indicative
- RS stock no.:
- 202-5552
- Mfr. Part No.:
- STWA67N60M6
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | ST | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.045Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 330W | |
| Typical Gate Charge Qg @ Vgs | 72.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 41.2mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series ST | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.045Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 330W | ||
Typical Gate Charge Qg @ Vgs 72.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 41.2mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Automotive Standard No | ||
The STMicroelectronics new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology.
100% avalanche tested
Zener-protected
Related links
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