STMicroelectronics ST Type N-Channel MOSFET, 68 A, 650 V Depletion, 3-Pin TO-247
- RS stock no.:
- 202-5546
- Mfr. Part No.:
- STW70N65DM6
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 5 447,79
(exc. VAT)
R 6 264,96
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 420 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 181.593 | R 5,447.79 |
| 120 - 240 | R 177.053 | R 5,311.59 |
| 270 - 570 | R 171.741 | R 5,152.23 |
| 600 - 1170 | R 164.872 | R 4,946.16 |
| 1200 + | R 158.277 | R 4,748.31 |
*price indicative
- RS stock no.:
- 202-5546
- Mfr. Part No.:
- STW70N65DM6
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | ST | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 450W | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 41.2mm | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series ST | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 450W | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 41.2mm | ||
Width 5.1 mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
100% avalanche tested
Zener-protected
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