Infineon FP35R12W2T7B11BOMA1, Type N-Channel IGBT, 35 A 1200 V, 31-Pin AG-EASY2B, Through Hole
- RS stock no.:
- 222-4800
- Mfr. Part No.:
- FP35R12W2T7B11BOMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
R 807,64
(exc. VAT)
R 928,79
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 08 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 807.64 |
| 10 - 99 | R 787.45 |
| 100 - 249 | R 763.83 |
| 250 - 499 | R 733.28 |
| 500 + | R 703.95 |
*price indicative
- RS stock no.:
- 222-4800
- Mfr. Part No.:
- FP35R12W2T7B11BOMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 35A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 7 | |
| Package Type | AG-EASY2B | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 31 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 56.7mm | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Series | FP35R12W2T7-B11 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 35A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 7 | ||
Package Type AG-EASY2B | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 31 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Length 56.7mm | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Series FP35R12W2T7-B11 | ||
Automotive Standard No | ||
The Infineon EasyPIM™ 2B 1200 V, 35 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology.
Low VCEsat
TRENCHSTOP™ IGBT7
Overload operation up to 175°C
2.5 kV AC 1min insulation
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
Related links
- Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B
- Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B
- Infineon 3 Phase IGBT Chassis
- Infineon FP35R12W2T7BPSA1 3 Phase IGBT Chassis
- Infineon IAUZ Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B
- Infineon FP35R12W2T4PB11BPSA1 IGBT Module, 35 A 1200 V EASY2B
- Infineon IGBT, 35 A 1200 V AG-EASY1B-711
- Infineon FS35R12W1T7BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711