onsemi Type N-Channel MOSFET, 316 A, 40 V Enhancement, 8-Pin DFN NVMFSC0D9N04CL
- RS stock no.:
- 195-2673
- Mfr. Part No.:
- NVMFSC0D9N04CL
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 687,72
(exc. VAT)
R 790,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 68.772 | R 687.72 |
| 100 - 490 | R 67.053 | R 670.53 |
| 500 - 990 | R 65.041 | R 650.41 |
| 1000 - 1490 | R 62.439 | R 624.39 |
| 1500 + | R 59.941 | R 599.41 |
*price indicative
- RS stock no.:
- 195-2673
- Mfr. Part No.:
- NVMFSC0D9N04CL
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 316A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.95mm | |
| Length | 5.9mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 316A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Operating Temperature 175°C | ||
Height 0.95mm | ||
Length 5.9mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
NVMFS5C410NWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
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