onsemi Type N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN NTMFSC0D9N04CL
- RS stock no.:
- 195-2664
- Mfr. Part No.:
- NTMFSC0D9N04CL
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 256,35
(exc. VAT)
R 294,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 25.635 | R 256.35 |
| 100 - 490 | R 24.994 | R 249.94 |
| 500 - 990 | R 24.244 | R 242.44 |
| 1000 - 1490 | R 23.274 | R 232.74 |
| 1500 + | R 22.343 | R 223.43 |
*price indicative
- RS stock no.:
- 195-2664
- Mfr. Part No.:
- NTMFSC0D9N04CL
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 850μΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 143nC | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Length | 5.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 850μΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 143nC | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Length 5.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Application
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
Related links
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