Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	40V
	Package Type	LFPAK
	Series	NVMYS8D0N04C
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	8.1mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	38W
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	4.25 mm
	Height	1.15mm
	Length	5mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 40V
	Package Type LFPAK
	Series NVMYS8D0N04C
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 8.1mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 38W
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 4.25 mm
	Height 1.15mm
	Length 5mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMYS8D0N04CTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS8D0N04C Type N-Channel MOSFET, 49 A, 40 V Enhancement, 4-Pin LFPAK

Related links