onsemi NTMYS014N06CL Type N-Channel MOSFET, 36 A, 60 V Enhancement, 4-Pin LFPAK NTMYS014N06CLTWG
- RS stock no.:
- 195-2529
- Mfr. Part No.:
- NTMYS014N06CLTWG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 30 units)*
R 507,78
(exc. VAT)
R 583,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 270 | R 16.926 | R 507.78 |
| 300 - 720 | R 16.503 | R 495.09 |
| 750 - 1470 | R 16.008 | R 480.24 |
| 1500 + | R 15.367 | R 461.01 |
*price indicative
- RS stock no.:
- 195-2529
- Mfr. Part No.:
- NTMYS014N06CLTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTMYS014N06CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 37W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTMYS014N06CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 37W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
Related links
- onsemi NTMYS014N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS014N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS014N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK NVMYS014N06CLTWG
- onsemi NVMYS1D3N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS3D3N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK