onsemi NTMYS8D0N04C Type N-Channel MOSFET, 49 A, 40 V Enhancement, 4-Pin LFPAK NTMYS8D0N04CTWG
- RS stock no.:
- 195-2527
- Mfr. Part No.:
- NTMYS8D0N04CTWG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 30 units)*
R 625,11
(exc. VAT)
R 718,89
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 23 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 270 | R 20.837 | R 625.11 |
| 300 - 720 | R 20.316 | R 609.48 |
| 750 - 1470 | R 19.707 | R 591.21 |
| 1500 + | R 18.918 | R 567.54 |
*price indicative
- RS stock no.:
- 195-2527
- Mfr. Part No.:
- NTMYS8D0N04CTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS8D0N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Width | 4.25 mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS8D0N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Width 4.25 mm | ||
Length 5mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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