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onsemi NVMYS3D3N06CL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG

RS stock no.:: 195-2513
Mfr. Part No.:: NVMYS3D3N06CLTWG
Manufacturer:: onsemi

onsemi NVMYS3D3N06CL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG

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Bulk discount available

Subtotal (1 pack of 20 units)*

R 432,46

(exc. VAT)

R 497,32

(inc. VAT)

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Units	Per unit	Per Pack*
20 - 80	R 21.623	R 432.46
100 - 480	R 21.083	R 421.66
500 - 980	R 20.45	R 409.00
1000 - 1480	R 19.632	R 392.64
1500 +	R 18.847	R 376.94

*price indicative

RS stock no.:: 195-2513
Mfr. Part No.:: NVMYS3D3N06CLTWG
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	133A
	Maximum Drain Source Voltage Vds	60V
	Package Type	LFPAK
	Series	NVMYS3D3N06CL
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	4.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	40.7nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	100W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	5mm
	Height	1.15mm
	Width	4.25 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 133A
	Maximum Drain Source Voltage Vds 60V
	Package Type LFPAK
	Series NVMYS3D3N06CL
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 4.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 40.7nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 100W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 5mm
	Height 1.15mm
	Width 4.25 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMYS3D3N06CLTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS3D3N06CL Type N-Channel MOSFET, 133 A, 60 V Enhancement, 4-Pin LFPAK NVMYS3D3N06CLTWG

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