N-Channel MOSFET, 133 A, 60 V, 5-Pin DFN onsemi NVMFS5C638NLT1G
- RS stock no.:
- 178-4305
- Mfr. Part No.:
- NVMFS5C638NLT1G
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 reel of 1500 units)**
R 24 507 00
(exc. VAT)
R 28 183 50
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Reel** |
|---|---|---|
| 1500 - 3000 | R 16,338 | R 24 507,00 |
| 4500 + | R 15,93 | R 23 895,00 |
**price indicative
- RS stock no.:
- 178-4305
- Mfr. Part No.:
- NVMFS5C638NLT1G
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 133 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 18.4 nC @ 4.5 V | |
| Width | 6.1mm | |
| Number of Elements per Chip | 1 | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 133 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 18.4 nC @ 4.5 V | ||
Width 6.1mm | ||
Number of Elements per Chip 1 | ||
Length 5.1mm | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||