onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220

RS stock no.:: 189-0264
Mfr. Part No.:: NTPF190N65S3HF
Manufacturer:: onsemi

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220

Image representative of range

Bulk discount available

Subtotal (1 tube of 50 units)*

R 1 983,30

(exc. VAT)

R 2 280,80

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 750 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	R 39.666	R 1,983.30
100 - 200	R 38.674	R 1,933.70
250 - 450	R 37.514	R 1,875.70
500 - 950	R 36.013	R 1,800.65
1000 +	R 34.573	R 1,728.65

*price indicative

RS stock no.:: 189-0264
Mfr. Part No.:: NTPF190N65S3HF
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Power Dissipation Pd	36W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4.9 mm
	Height	16.12mm
	Length	10.63mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Power Dissipation Pd 36W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4.9 mm
	Height 16.12mm
	Length 10.63mm
	Automotive Standard No

Datasheet NTPF190N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 35 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)

Optimized Capacitance

Typ. RDS(on) = 161 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Computing

Consumer

Industrial

End Products

Notebook / Desktop computer / Game console

Telecom / Server

LED Lighting / Ballast

Adapter

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220

FREE delivery for orders over R 1,500.00

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