STMicroelectronics Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 STB80NF55-06T4
- RS stock no.:
- 188-8527
- Mfr. Part No.:
- STB80NF55-06T4
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
R 334,95
(exc. VAT)
R 385,20
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 66.99 | R 334.95 |
| 50 - 95 | R 65.316 | R 326.58 |
| 100 - 245 | R 63.356 | R 316.78 |
| 250 - 495 | R 60.822 | R 304.11 |
| 500 + | R 58.39 | R 291.95 |
*price indicative
- RS stock no.:
- 188-8527
- Mfr. Part No.:
- STB80NF55-06T4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 142nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Height | 4.37mm | |
| Width | 9.35 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 142nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Height 4.37mm | ||
Width 9.35 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Exceptional dv/dt capability
Application oriented characterization
Applications
Switching application
Applications
Switching application
Related links
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- STMicroelectronics STripFET II Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 STP80NF55-06
- STMicroelectronics STripFET II Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220