STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263
- RS stock no.:
- 188-8461P
- Mfr. Part No.:
- STB11NM80T4
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionsSubtotal 50 units (supplied on a continuous strip)*
R 6 682,50
(exc. VAT)
R 7 685,00
(inc. VAT)
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- Shipping from 30 November 2026
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Units | Per unit |
|---|---|
| 50 - 98 | R 133.65 |
| 100 - 248 | R 129.64 |
| 250 - 498 | R 124.455 |
| 500 + | R 119.475 |
*price indicative
- RS stock no.:
- 188-8461P
- Mfr. Part No.:
- STB11NM80T4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MDmesh Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | STB11NM80 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 0.86V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.37mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MDmesh Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series STB11NM80 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 0.86V | ||
Maximum Operating Temperature 150°C | ||
Height 4.37mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)Qg in the industry
Applications
Switching applications