STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252
- RS stock no.:
- 188-8440P
- Mfr. Part No.:
- STD5N80K5
- Manufacturer:
- STMicroelectronics
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Subtotal 50 units (supplied on a continuous strip)*
R 1 066,80
(exc. VAT)
R 1 226,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 4,660 left, ready to ship from another location
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Units | Per unit |
|---|---|
| 50 - 90 | R 21.336 |
| 100 - 240 | R 20.696 |
| 250 - 990 | R 19.868 |
| 1000 + | R 19.073 |
*price indicative
- RS stock no.:
- 188-8440P
- Mfr. Part No.:
- STD5N80K5
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.73Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.17mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.73Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.17mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
Zener-protected
Applications
Switching applications