STMicroelectronics Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin TO-252 STD11N65M2

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Subtotal (1 pack of 5 units)*

R 148,23

(exc. VAT)

R 170,465

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 29.646R 148.23
50 - 95R 28.904R 144.52
100 - 245R 28.036R 140.18
250 - 995R 26.914R 134.57
1000 +R 25.838R 129.19

*price indicative

Packaging Options:
RS stock no.:
188-8395
Mfr. Part No.:
STD11N65M2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

680mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

85W

Typical Gate Charge Qg @ Vgs

100nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Width

6.2 mm

Height

2.17mm

Standards/Approvals

No

Length

6.6mm

Automotive Standard

No

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Extremely low gate charge

Excellent output capacitance (COSS) profile

Zener-protected

Applications

Switching applications

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