STMicroelectronics Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 188-8295
- Mfr. Part No.:
- STP6N95K5
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 1 233,25
(exc. VAT)
R 1 418,25
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 24.665 | R 1,233.25 |
| 100 - 450 | R 24.049 | R 1,202.45 |
| 500 - 950 | R 23.327 | R 1,166.35 |
| 1000 - 1950 | R 22.394 | R 1,119.70 |
| 2000 + | R 21.498 | R 1,074.90 |
*price indicative
- RS stock no.:
- 188-8295
- Mfr. Part No.:
- STP6N95K5
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.25Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 90W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.25Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 90W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 15.75mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Ultra low gate charge
Zener-protected
Applications
Switching applications
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