Vishay SiS862ADN Type N-Channel MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SIS862ADN-T1-GE3

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Subtotal (1 pack of 25 units)*

R 416,925

(exc. VAT)

R 479,475

(inc. VAT)

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Last RS stock
  • Final 8,900 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
25 - 25R 16.677R 416.93
50 - 75R 16.26R 406.50
100 - 475R 15.772R 394.30
500 - 975R 15.142R 378.55
1000 +R 14.536R 363.40

*price indicative

Packaging Options:
RS stock no.:
188-4951
Mfr. Part No.:
SIS862ADN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

SiS862ADN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

39W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

19.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.15 mm

Length

3.15mm

Standards/Approvals

No

Height

1.07mm

Distrelec Product Id

304-38-850

Automotive Standard

No

N-Channel 60 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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