onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23

RS stock no.:: 186-7147
Mfr. Part No.:: FDC3601N
Manufacturer:: onsemi

onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23

Image representative of range

Subtotal (1 reel of 3000 units)*

R 12 807,00

(exc. VAT)

R 14 727,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 25 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	R 4.269	R 12,807.00

*price indicative

RS stock no.:: 186-7147
Mfr. Part No.:: FDC3601N
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TSOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	550mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	0.96W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	3.7nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Width	3 mm
	Height	1mm
	Standards/Approvals	No
	Length	3.1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1A
	Maximum Drain Source Voltage Vds 100V
	Package Type TSOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 550mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 0.96W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 3.7nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Width 3 mm
	Height 1mm
	Standards/Approvals No
	Length 3.1mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet FDC3601N

These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

1.0 A, 100 V

RDS(on) = 500 mΩ@ VGS = 10 V

RDS(on) = 550 mΩ @ VGS = 6 V

Low gate charge (3.7nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)

Applications

This product is general usage and suitable for many different applications.

onsemi Dual 2 Type N-Channel MOSFET, 1 A, 100 V, 6-Pin TSOT-23

FREE delivery for orders over R 1,500.00

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