onsemi Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 NVHL027N65S3F

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Subtotal (1 unit)*

R 368,18

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R 423,41

(inc. VAT)

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1 - 9R 368.18
10 - 24R 358.98
25 - 99R 348.21
100 - 249R 334.28
250 +R 320.91

*price indicative

Packaging Options:
RS stock no.:
186-1497
Mfr. Part No.:
NVHL027N65S3F
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

595W

Typical Gate Charge Qg @ Vgs

227nC

Maximum Operating Temperature

150°C

Length

15.87mm

Width

4.82 mm

Height

20.82mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Non Compliant

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150°C

Ultra Low Gate Charge (Typ. Qg = 259 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)

PPAP Capable

Typ. RDS(on) = 27.4 mΩ

Higher system reliability at low temperature operation

Lower switching loss

PPAP Capable

Applications

HV DC/DC converter

End Products

On Board Charger

DC/DC Converter

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