onsemi NVMTS0D6N04C Type N-Channel MOSFET, 533 A, 40 V Enhancement, 8-Pin DFN NVMTS0D6N04CTXG
- RS stock no.:
- 186-1425
- Mfr. Part No.:
- NVMTS0D6N04CTXG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 749,04
(exc. VAT)
R 861,395
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,245 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 149.808 | R 749.04 |
| 50 - 495 | R 146.062 | R 730.31 |
| 500 - 1245 | R 141.68 | R 708.40 |
| 1250 - 2495 | R 136.012 | R 680.06 |
| 2500 + | R 130.572 | R 652.86 |
*price indicative
- RS stock no.:
- 186-1425
- Mfr. Part No.:
- NVMTS0D6N04CTXG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 533A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | NVMTS0D6N04C | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 480μΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 187nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Length | 8.1mm | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 533A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series NVMTS0D6N04C | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 480μΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 187nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Length 8.1mm | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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