onsemi NVTFS6H888N Type N-Channel MOSFET, 12 A, 80 V Enhancement, 8-Pin WDFN
- RS stock no.:
- 185-8164
- Mfr. Part No.:
- NVTFS6H888NTAG
- Manufacturer:
- onsemi
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- RS stock no.:
- 185-8164
- Mfr. Part No.:
- NVTFS6H888NTAG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | WDFN | |
| Series | NVTFS6H888N | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Power Dissipation Pd | 18W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.15mm | |
| Width | 3.15 mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type WDFN | ||
Series NVTFS6H888N | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Power Dissipation Pd 18W | ||
Maximum Operating Temperature 175°C | ||
Length 3.15mm | ||
Width 3.15 mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3.3 x 3.3 mm)
Low On-Resistance
Low Capacitance
NVTFS6H850NWF − Wettable Flanks Product
PPAP Capable
Compact Design
Minimizes Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Suitable for Automotive Applications
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
End Products
Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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