onsemi Dual PowerTrench 2 Type N-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin WDFN FDMA2002NZ
- RS stock no.:
- 184-5019
- Mfr. Part No.:
- FDMA2002NZ
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 263,20
(exc. VAT)
R 302,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 13.16 | R 263.20 |
| 300 - 580 | R 12.831 | R 256.62 |
| 600 - 1180 | R 12.446 | R 248.92 |
| 1200 - 2380 | R 11.948 | R 238.96 |
| 2400 + | R 11.47 | R 229.40 |
*price indicative
- RS stock no.:
- 184-5019
- Mfr. Part No.:
- FDMA2002NZ
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 268mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.75mm | |
| Width | 2 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 268mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.75mm | ||
Width 2 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
2.9 A, 30 V
RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
RDS(ON) = 163 mΩ @ VGS = 2.5 V
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
HBM ESD protection level=1.8kV (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications
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