onsemi NVTFS5116PL Type P-Channel MOSFET, 14 A, 60 V Enhancement, 8-Pin WDFN NVTFS5116PLTAG
- RS stock no.:
- 184-1458
- Mfr. Part No.:
- NVTFS5116PLTAG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 129,86
(exc. VAT)
R 149,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,870 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 140 | R 12.986 | R 129.86 |
| 150 - 290 | R 12.661 | R 126.61 |
| 300 - 590 | R 12.281 | R 122.81 |
| 600 - 1190 | R 11.79 | R 117.90 |
| 1200 + | R 11.318 | R 113.18 |
*price indicative
- RS stock no.:
- 184-1458
- Mfr. Part No.:
- NVTFS5116PLTAG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | WDFN | |
| Series | NVTFS5116PL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 72mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 21W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.15 mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type WDFN | ||
Series NVTFS5116PL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 72mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 21W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 3.15 mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.
Small Footprint (3.3 x 3.3 mm)
Low On-Resistance
Low Capacitance
NVTFS5116PLWF − Wettable Flanks Product
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Suitable for Automotive Applications
Applications:
Automotive load switch
Motor driver
DC-DC switch output
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