onsemi NTTFS5116PL Type P-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin WDFN
- RS stock no.:
- 121-6310
- Mfr. Part No.:
- NTTFS5116PLTAG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 1500 units)*
R 10 794,00
(exc. VAT)
R 12 412,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 7,500 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | R 7.196 | R 10,794.00 |
| 3000 - 4500 | R 7.016 | R 10,524.00 |
| 6000 - 13500 | R 6.806 | R 10,209.00 |
| 15000 + | R 6.534 | R 9,801.00 |
*price indicative
- RS stock no.:
- 121-6310
- Mfr. Part No.:
- NTTFS5116PLTAG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | WDFN | |
| Series | NTTFS5116PL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 72mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.15 mm | |
| Height | 0.75mm | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type WDFN | ||
Series NTTFS5116PL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 72mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 3.15 mm | ||
Height 0.75mm | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
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