Diodes Inc N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK DMNH6011LK3-13
- RS stock no.:
- 182-7152
- Mfr. Part No.:
- DMNH6011LK3-13
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 5 units)*
R 131,02
(exc. VAT)
R 150,675
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 120 | R 26.204 | R 131.02 |
| 125 - 245 | R 25.548 | R 127.74 |
| 250 - 495 | R 24.782 | R 123.91 |
| 500 - 995 | R 23.79 | R 118.95 |
| 1000 + | R 22.838 | R 114.19 |
*price indicative
- RS stock no.:
- 182-7152
- Mfr. Part No.:
- DMNH6011LK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Length | 6.7mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 49.1 nC @ 10V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 2.26mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Length 6.7mm | ||
Maximum Operating Temperature +175 °C | ||
Width 6.2mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 49.1 nC @ 10V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 2.26mm | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rated to 175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Power Supplies
Motor Control
DC-DC Converters
100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Power Supplies
Motor Control
DC-DC Converters
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