Vishay Single 1 Type N-Channel Power MOSFET, 3.3 A, 500 V

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Subtotal (1 pack of 5 units)*

R 83,57

(exc. VAT)

R 96,105

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 16.714R 83.57
10 - 20R 16.296R 81.48
25 +R 15.808R 79.04

*price indicative

RS stock no.:
180-8724
Mfr. Part No.:
IRFR420APBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.3A

Maximum Drain Source Voltage Vds

500V

Maximum Drain Source Resistance Rds

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 3ohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 83W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Effective coss specified

• Fully characterized capacitance and avalanche voltage and current

• Halogen and lead (Pb) free component

• Improved gate, avalanche and dynamic dV/dt

• Low gate charge Qg results in simple drive requirement

• Operating temperature ranges between -55°C and 150°

Applications


• High speed power switching

• Switch mode power supply (SMPS)

• Uninterruptible power supplies

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