Vishay Single 1 Type N-Channel Power MOSFET, 2.2 A, 600 V, 3-Pin IRFBC20SPBF
- RS stock no.:
- 180-8314
- Mfr. Part No.:
- IRFBC20SPBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 749,25
(exc. VAT)
R 861,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 14.985 | R 749.25 |
| 100 - 450 | R 14.611 | R 730.55 |
| 500 - 950 | R 14.172 | R 708.60 |
| 1000 - 1950 | R 13.606 | R 680.30 |
| 2000 + | R 13.061 | R 653.05 |
*price indicative
- RS stock no.:
- 180-8314
- Mfr. Part No.:
- IRFBC20SPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFBC20S is a N-channel power MOSFET having drain to source(Vds) voltage of 600V.The gate to source voltage(VGS) is 20V. It is having I2PAK (TO-262) and D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 4.4ohms at 10VGS. Maximum drain current 2.2A.
Surface mount
Dynamic dV/dt rating
150 °C operating temperature
Fast switching
Fully avalanche rated
Related links
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