Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 180-8076P
- Mfr. Part No.:
- SQ2337ES-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
R 1 137,70
(exc. VAT)
R 1 308,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,240 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 100 - 480 | R 11.377 |
| 500 - 980 | R 11.036 |
| 1000 + | R 10.594 |
*price indicative
- RS stock no.:
- 180-8076P
- Mfr. Part No.:
- SQ2337ES-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 314mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Width | 2.64 mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 314mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Width 2.64 mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 290mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2.2A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
- Vishay TrenchFET P-Channel MOSFET 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3
- Vishay TrenchFET P-Channel MOSFET 40 V, 3-Pin SOT-23 SQ2389ES-T1_GE3
- Vishay TrenchFET P-Channel MOSFET 60 V, 3-Pin SOT-23 SQ2309ES-T1_GE3
- Vishay TrenchFET P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2399DS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay TrenchFET P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2307CDS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2347DS-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2369DS-T1-GE3