Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB
- RS stock no.:
- 180-7350
- Mfr. Part No.:
- SIHP25N50E-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 50 units)*
R 1 846,40
(exc. VAT)
R 2 123,35
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 250 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 36.928 | R 1,846.40 |
| 100 - 200 | R 36.005 | R 1,800.25 |
| 250 - 450 | R 34.924 | R 1,746.20 |
| 500 - 950 | R 33.527 | R 1,676.35 |
| 1000 + | R 32.186 | R 1,609.30 |
*price indicative
- RS stock no.:
- 180-7350
- Mfr. Part No.:
- SIHP25N50E-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | E | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.71mm | |
| Width | 10.52 mm | |
| Length | 14.4mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series E | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Height 6.71mm | ||
Width 10.52 mm | ||
Length 14.4mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Low figure-of-merit (FOM): Ron x Qg
• Low gate charge (Qg)
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced switching and conduction losses
Applications
• Hard switched topologies
• PC silver box/ATX power supplies
• Power factor correction power supplies (PFC)
• Switch mode power supplies (SMPS)
• Two-stage LED lighting
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested
Related links
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