N-Channel MOSFET, 83 A, 40 V, 3-Pin DPAK onsemi NVD5C454NT4G
- RS stock no.:
- 178-4640
- Mfr. Part No.:
- NVD5C454NT4G
- Manufacturer:
- onsemi
Subtotal (1 pack of 10 units)**
R 320 08
(exc. VAT)
R 368 09
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 90 | R 32,008 | R 320,08 |
| 100 - 240 | R 31,208 | R 312,08 |
| 250 - 490 | R 30,272 | R 302,72 |
| 500 - 990 | R 29,061 | R 290,61 |
| 1000 + | R 27,899 | R 278,99 |
**price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (On a Reel of 2500)
R 17,436
(exc. VAT)
R 20,051
(inc. VAT)
- RS stock no.:
- 178-4640
- Mfr. Part No.:
- NVD5C454NT4G
- Manufacturer:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 83 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 56 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Height | 2.25mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 83 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 56 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Height 2.25mm | ||
Minimum Operating Temperature -55 °C | ||
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