Vishay Siliconix TrenchFET Type P-Channel MOSFET, 10 A, 40 V Enhancement, 6-Pin SC-70-6L SQA405EJ-T1_GE3
- RS stock no.:
- 178-3910
- Mfr. Part No.:
- SQA405EJ-T1_GE3
- Manufacturer:
- Vishay Siliconix
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 243,525
(exc. VAT)
R 280,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 850 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 9.741 | R 243.53 |
| 100 - 475 | R 9.497 | R 237.43 |
| 500 - 975 | R 9.212 | R 230.30 |
| 1000 + | R 8.844 | R 221.10 |
*price indicative
- RS stock no.:
- 178-3910
- Mfr. Part No.:
- SQA405EJ-T1_GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SC-70-6L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.035Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13.6W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SC-70-6L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.035Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13.6W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Height 1mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Exempt
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
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