Microchip Type N-Channel MOSFET, 3 A Enhancement, 3-Pin TO-92 TP0606N3-G
- RS stock no.:
- 177-9861
- Distrelec Article No.:
- 304-38-568
- Mfr. Part No.:
- TP0606N3-G
- Manufacturer:
- Microchip
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 189,02
(exc. VAT)
R 217,37
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,400 unit(s) shipping from 19 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 18.902 | R 189.02 |
| 50 - 90 | R 18.429 | R 184.29 |
| 100 + | R 17.876 | R 178.76 |
*price indicative
- RS stock no.:
- 177-9861
- Distrelec Article No.:
- 304-38-568
- Mfr. Part No.:
- TP0606N3-G
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Related links
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