ROHM R6520ENX Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220FM R6520ENX
- RS stock no.:
- 177-6458
- Mfr. Part No.:
- R6520ENX
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 54,33
(exc. VAT)
R 62,48
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Plus 2 unit(s) shipping from 29 December 2025
- Final 438 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 27.165 | R 54.33 |
| 10 - 48 | R 26.485 | R 52.97 |
| 50 - 98 | R 25.69 | R 51.38 |
| 100 - 248 | R 24.66 | R 49.32 |
| 250 + | R 23.675 | R 47.35 |
*price indicative
- RS stock no.:
- 177-6458
- Mfr. Part No.:
- R6520ENX
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | R6520ENX | |
| Package Type | TO-220FM | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Height | 15.4mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series R6520ENX | ||
Package Type TO-220FM | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Height 15.4mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
Exempt
- COO (Country of Origin):
- JP
R6520ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
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