ROHM R6520ENX N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220FM R6520ENX
- RS stock no.:
- 177-6458
- Mfr. Part No.:
- R6520ENX
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 130,34
(exc. VAT)
R 149,90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 65.17 | R 130.34 |
| 10 - 48 | R 63.54 | R 127.08 |
| 50 - 98 | R 61.635 | R 123.27 |
| 100 - 248 | R 59.17 | R 118.34 |
| 250 + | R 56.805 | R 113.61 |
*price indicative
- RS stock no.:
- 177-6458
- Mfr. Part No.:
- R6520ENX
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220FM | |
| Series | R6520ENX | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.4mm | |
| Length | 10.3mm | |
| Standards/Approvals | No | |
| Width | 4.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220FM | ||
Series R6520ENX | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 15.4mm | ||
Length 10.3mm | ||
Standards/Approvals No | ||
Width 4.8mm | ||
Automotive Standard No | ||
Exempt
- COO (Country of Origin):
- JP
R6520ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
Related links
- ROHM R6520ENX N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220FM R6520ENX
- ROHM R6520KNX N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220FM R6520KNX
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- onsemi N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP65N150M9
- onsemi N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 NTPF190N65S3HF
- onsemi N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- onsemi NTHL N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL190N65S3HF