onsemi FCP Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCP067N65S3

RS stock no.:: 172-4628
Mfr. Part No.:: FCP067N65S3
Manufacturer:: onsemi

onsemi FCP Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCP067N65S3

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 428,01

(exc. VAT)

R 492,21

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

2,210 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 120	R 85.602	R 428.01
125 - 245	R 83.462	R 417.31
250 - 495	R 80.958	R 404.79
500 +	R 77.72	R 388.60

*price indicative

RS stock no.:: 172-4628
Mfr. Part No.:: FCP067N65S3
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Series	FCP
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	78nC
	Maximum Power Dissipation Pd	312W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	16.3mm
	Width	4.7 mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Series FCP
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 78nC
	Maximum Power Dissipation Pd 312W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 16.3mm
	Width 4.7 mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

Wave soldering guarantee

Computing

Consumer

Industrial

Telecom / Server

Solar inverter / UPS

EVC

Automation

onsemi FCP Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCP067N65S3

FREE delivery for orders over R 1,500.00

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