Taiwan Semi N-Channel MOSFET, 8 A, 700 V, 3-Pin DPAK TSM70N600CP ROG
- RS stock no.:
- 171-3638
- Mfr. Part No.:
- TSM70N600CP ROG
- Manufacturer:
- Taiwan Semiconductor
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 142 597,50
(exc. VAT)
R 163 987,50
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 57.039 | R 142,597.50 |
| 5000 - 5000 | R 55.613 | R 139,032.50 |
| 7500 + | R 53.944 | R 134,860.00 |
*price indicative
- RS stock no.:
- 171-3638
- Mfr. Part No.:
- TSM70N600CP ROG
- Manufacturer:
- Taiwan Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.1mm | |
| Length | 6.6mm | |
| Typical Gate Charge @ Vgs | 12.6 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.3mm | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.1mm | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 12.6 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
Forward Diode Voltage 1.4V | ||
The Taiwan Semiconductor 800V, 7A, 0. 6Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Operating temperature ranges between -55 °C to +150 °C
83W max. power dissipation
Gate threshold voltage ranges between 2V-4V
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Operating temperature ranges between -55 °C to +150 °C
83W max. power dissipation
Gate threshold voltage ranges between 2V-4V
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